Exactly where DA will be the deformation possible in graphene, kB will be the Boltzmann continuous, e will be the electron demand, ℏ The primary benefit of epitaxial graphene growth on silicon carbide in excess of other strategies is to obtain graphene levels specifically on the semiconducting or semi-insulating substrate https://www.quora.com/profile/Trevor-Flatcher-2/Silicon-carbide-in-new-energy-generation-applications-and-future-trends-Silicon-Carbide-in-New-Energy-Generation-Applic